Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

0

25

50

75

100

125

150

IR(µA)

Tj = 75 °C

Tj = 100 °C

Tj = 125 °C

Tj = 150 °C

Tj = 50 °C

Tj = 25 °C

VR(V)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

1000

10000

1

10

100

1000

C(pF)

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

Figure 7. Forward voltage drop versus forward current (per diode)

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

Tj = 125 °C

(typical values)

Tj = 125 °C

(maximum values)

Tj = 25 °C

(maximum values)

VF(V)

IF(A)

STPS60150C

Characteristics (curves)

DS4090 - Rev 2

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