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ICS853052AM 데이터시트(PDF) 3 Page - Integrated Device Technology |
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ICS853052AM 데이터시트(HTML) 3 Page - Integrated Device Technology |
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3 / 14 page ![]() IDT™ / ICS™ 2.5V, 3.3V, 5V LVPECL MULTIPLEXER 3 ICS853052AG REV. B OCTOBER 24, 2007 ICS853052 DUAL LVCMOS/LVTTL-TO-DIFFERENTIAL 2.5V, 3.3V, 5V LVPECL MULTIPLEXER PRELIMINARY ABSOLUTE MAXIMUM RATINGS NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Supply Voltage, V CC 6V (LVPECL mode, V EE = 0) Negative Supply Voltage, V EE -6V (ECL mode, V CC = 0) Inputs, V I (LVPECL mode) -0.5V to V CC + 0.5 V Inputs, V I (ECL mode) 0.5V to V EE - 0.5V Outputs, I O Continuous Current 50mA Surge Current 100mA Operating Temperature Range, TA -40°C to +85°C Storage Temperature, T STG -65°C to 150°C Package Thermal Impedance, θ JA 101.7°C/W (0 m/s) TSSOP (Junction-to-Ambient) 112.7°C/W (0 lfpm) SOIC TABLE 4A. DC CHARACTERISTICS, V CC = 2.5V; VEE = 0V TABLE 4B. DC CHARACTERISTICS, V CC = 3.3V; VEE = 0V l o b m y Sr e t e m a r a P C ° 0 4 -C ° 5 2C ° 5 8 s t i n U n i Mp y Tx a Mn i Mp y Tx a Mn i Mp y Tx a M I E E t n e r r u C y l p p u S r e w o P1 21 21 2A m V H O 1 E T O N ; e g a t l o V h g i H t u p t u O5 7 1 25 7 2 20 8 3 25 2 2 25 9 2 20 7 3 25 9 2 20 3 3 25 6 3 2V m V L O 1 E T O N ; e g a t l o V w o L t u p t u O5 0 4 15 4 5 10 8 6 15 2 4 10 2 5 15 1 6 10 4 4 15 3 5 10 3 6 1V m V H I d e d n E - e l g n i S , e g a t l o V h g i H t u p n I5 7 0 20 2 4 25 7 0 20 2 4 25 7 0 20 2 4 2V m V L I d e d n E - e l g n i S , e g a t l o V w o L t u p n I5 5 3 15 7 6 15 5 3 15 7 6 15 5 3 15 7 6 1V m I H I t n e r r u C h g i H t u p n I0 0 20 0 20 0 2A µ I L I t n e r r u C w o L t u p n I0 0 20 0 20 0 2A µ V h t i w 1 : 1 y r a v s r e t e m a r a p t u p t u o d n a t u p n I C C . 0 5 h t i w d e t a n i m r e t s t u p t u O : 1 E T O N Ω V o t C C . V 2 - l o b m y Sr e t e m a r a P C ° 0 4 -C ° 5 2C ° 5 8 s t i n U n i Mp y Tx a Mn i Mp y Tx a Mn i Mp y Tx a M I E E t n e r r u C y l p p u S r e w o P1 21 21 2A m V H O 1 E T O N ; e g a t l o V h g i H t u p t u O5 7 3 . 15 7 4 . 18 5 . 15 2 4 . 15 9 4 . 17 5 . 15 9 4 . 13 5 . 15 6 5 . 1 V V L O 1 E T O N ; e g a t l o V w o L t u p t u O5 0 6 . 05 4 7 . 08 8 . 05 2 6 . 02 7 . 05 1 8 . 04 6 . 05 3 7 . 03 8 . 0 V V H I , e g a t l o V h g i H t u p n I d e d n E - e l g n i S 5 7 2 . 16 5 . 15 7 2 . 16 5 . 15 7 2 . 13 8 . 0 - V V L I d e d n E - e l g n i S , e g a t l o V w o L t u p n I3 6 . 05 6 9 . 03 6 . 05 6 9 . 03 6 . 05 6 9 . 0 V I H I t n e r r u C h g i H t u p n I0 0 20 0 20 0 2A µ I L I t n e r r u C w o L t u p n I0 0 20 0 20 0 2A µ V h t i w 1 : 1 y r a v s r e t e m a r a p t u p t u o d n a t u p n I C C . 0 5 h t i w d e t a n i m r e t s t u p t u O : 1 E T O N Ω V o t C C . V 2 - |
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