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STPS10150CFP 데이터시트(PDF) 3 Page - STMicroelectronics |
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STPS10150CFP 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() DocID7754 Rev 7 3/12 STPS10150C Characteristics 12 To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.02 x IF 2 (RMS) Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 I(A) F(av) P(W) F(av) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 T δ=tp/T tp Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) Figure 4. Reverse leakage current versus reverse voltage applied (typical values, per diode) P(tp) P (10 µs) ARM ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p 0 25 50 75 100 125 150 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 1E+5 V(V) R I (µA) R Tj=75°C Tj=25°C Tj=125°C Tj=150°C Tj=175°C Figure 5. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, D²PAK) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) 0.1 1.0 1.E-3 1.E-2 1.E-1 1.E+0 Single pulse TO-220AB D²PAK Zth(j-c)/Rth(j-c) tp(s) 0.0 0.1 1.0 1.E-3 1.E-2 1.E-1 1.E+0 1.E+1 Single pulse TO-220FPAB Zth(j-c)/Rth(j-c) tp(s) |
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