Features

•

AEC-Q101 qualified and PPAP capable

•

None or negligible reverse recovery

•

Switching behavior independent of temperature

•

Robust high voltage periphery

•

Operating Tj from -55 °C to 175 °C

•

SMD with top side cooling package (HU3PAK)

•

ECOPACK2 compliant component

Applications

•

Vehicle to load converter

•

Wound rotor synchronous motor

•

HEV/EV OBC (On board battery chargers)

•

EV Charging station

Description

The SiC diode, available in HU3PAK (SMD topside cooling package), is a ultrahigh

performance power Schottky rectifier. It is manufactured using a silicon carbide

substrate. The wide band-gap material allows the design of a low VF Schottky diode

structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is

shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-

off behavior is independent of temperature.

Based on the latest technology optimization, this diode has an improved forward

surge current capability, making it ideal for use in PFC, where this ST SiC diode will

boost the performance in hard switching conditions while bringing robustness to the

design. Its high forward surge capability ensures a good robustness during transient

phases.

HU3PAK

A

K

K

A A

A A

A

NC

NC

A

A

A

A

Product label

Product status link

STPSC20G12L2Y

Product summary

IF(AV)

20 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode

STPSC20G12L2Y

Datasheet

DS14787 - Rev 2 - October 2024

For further information contact your local STMicroelectronics sales office.

www.st.com