Features

•

AEC-Q101 qualified and PPAP capable

•

None or negligible reverse recovery

•

Switching behavior independent of temperature

•

Robust high voltage periphery

•

Operating Tj from -55 °C to 175 °C

•

Avalanche energy rated

•

ECOPACK2 compliant component

Applications

•

Boost PFC

•

HEV/EV OBC (On board battery chargers)

•

EV Charging station

Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance

power Schottky rectifier. It is manufactured using a silicon carbide substrate. The

wide band-gap material allows the design of a low VF Schottky diode structure with

a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during

turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is

independent of temperature.

Based on latest technology optimization, this diode has an improved forward

surge current capability, making it ideal for use in PFC, where this ST SiC diode

boosts the performance in hard switching conditions while bringing robustness to the

design. Its high forward surge capability ensures a good robustness during transient

phases.

A

K

DO-247 LL

A

K

K

Product label

Product status link

STPSC30G12-Y

Product summary

IF(AV)

30 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode

STPSC30G12-Y

Datasheet

DS14118 - Rev 1 - November 2022

For further information contact your local STMicroelectronics sales office.

www.st.com