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TLV07 데이터시트(PDF) 4 Page - Texas Instruments |
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TLV07 데이터시트(HTML) 4 Page - Texas Instruments |
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4 / 29 page ![]() 4 TLV07 SBOS832A – JULY 2017 – REVISED AUGUST 2017 www.ti.com Product Folder Links: TLV07 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Short-circuit to ground, one amplifier per package. 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range, unless otherwise noted. (1) MIN MAX UNIT Supply voltage –20 20 V Single supply voltage 40 V Signal input pin voltage (V–) – 0.5 (V+) + 0.5 V Signal input pin current –10 10 mA Output short-circuit current(2) Continuous Operating ambient temperature, TA –40 125 °C Junction temperature, TJ 150 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VS Supply voltage (VS = V+ – V–) 2.7 36 V TA Operating temperature –40 125 °C 6.4 Thermal Information: TLV07 THERMAL METRIC TLV07 UNIT D (SOIC) 8 PINS RθJA Junction-to-ambient thermal resistance 149.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 97.9 °C/W RθJB Junction-to-board thermal resistance 87.7 °C/W ψJT Junction-to-top characterization parameter 35.5 °C/W ψJB Junction-to-board characterization parameter 89.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W |
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