STTH16L06CTY datasheet(5/12 Pages) STMICROELECTRONICS

5 / 12 page

STTH16L06C-Y

Characteristics

DocID026936 Rev 3

5/12

Figure 7: Relative variations of dynamic

parameters versus junction temperature

Figure 8: Reverse recovery softness factor versus

dlF/dt (typical values, per diode)

Figure 9: Forward recovery time versus dlF/dt

(typical values, per diode)

Figure 10: Transient peak forward voltage versus

dlF/dt (typical values, per diode)

Figure 11: Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 12: Thermal resistance, junction to ambient,

versus copper surface under tab

(epoxy FR4, coper thickness = 35 µm)(D2PAK)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

150

2 00

2 50

300

350

400

450

500

Sfactor

dI /dt(A/µs)

I < 2 x I

T =1 25°C

F(AV )

V =400V

2 0

4 0

6 0

8 0

10 0

12 0

14 0

16 0

18 0

1 0 0

2 0 0

3 00

4 00

5 00

t (ns)

dI /dt(A/µs)

I =I

T =1 25 °C

F(AV )

=1 .1 x V max.

F R

1 0

1 1

1 2

1 3

1 4

1 5

1 6

10 0

1 5 0

20 0

25 0

3 00

3 5 0

40 0

45 0

5 0 0

(V)

F P

dI /dt(A/µs)

I =I

T =12 5°C

F(AV )

1 0

100

10 0

10 00

C (pF)

V (V)

F =1 MH z

=3 0 mV

T =25°C

O SC

RM S

1 0

2 0

3 0

4 0

5 0

6 0

7 0

8 0

1 0

1 5

2 0

2 5

3 0

3 5

4 0

(°C/W)

th (j-a)

(c m²)

C U

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