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STTH8L02D-Y 데이터시트(PDF) 3 Page - STMicroelectronics |
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STTH8L02D-Y 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STTH8L02D-Y Characteristics DocID030708 Rev 1 3/10 Table 5: Dynamic electrical characteristics per diode (Tj = 25 °C, unless otherwise specified) Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 1 A dIF/dt = - 50 A/μs VR = 30 V - 40 ns IF = 1 A dIF/dt = - 100 A/μs VR = 30 V - 20 28 IF = 4 A dIF/dt = - 200 A/μs VR = 160 V Tj = 125 °C 35 IRM Reverse recovery current - 6.8 8.5 A Qrr Reverse recovery charge - 110 nC |
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