STTH8R02D-Y datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STTH8R02D-Y

4/10

DocID029557 Rev 2

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Forward voltage drop versus forward

current (typical values)

Figure 3: Forward voltage drop versus forward

current (maximum values)

Figure 4: Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 5: Reverse recovery charges versus dIF / dt

(typical values, per diode)

Figure 6: Reverse recovery time versus dIF / dt

(typical values, per diode)

F(AV )(A)

(AV )(W )

δ= 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ = tp/T

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0

0.5

1.0

1.5

2.0

VFM(V)

IFM(A)

j = 25 °C

j = 150 °C

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0

0.5

1.0

1.5

2.0

2.5

VFM(V)

IFM(A)

j = 25 °C

j = 150 °C

100

1000

VR(V)

C(pF)

F = 1 MHz

osc = 30 mVRMS

j = 25°C

100

120

100

150

200

250

300

350

400

450

500

F/dt(A/µs)

R R (nC)

F = 4 A

R = 160 V

j = 125°C

j = 25°C

100

1000

RR(ns)

F/dt(A/µs)

F = 4 A

R = 160 V

j = 125°C

j = 25°C

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