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TPS2480PW 데이터시트(PDF) 24 Page - Texas Instruments |
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TPS2480PW 데이터시트(HTML) 24 Page - Texas Instruments |
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24 / 60 page ![]() ´ = O VCC ON CHARGE C V t I GATE ON G ISS VCC I t C C V ´ = - TPS2480 TPS2481 SLUS939B – APRIL 2010 – REVISED DECEMBER 2010 www.ti.com Alternative Inrush Designs Gate Capacitor (dV/dt) Control The TPS2480/81 can be configured to provide a linear dV/dt turn on characteristic. The load capacitor charging current ICHARGE, is controlled by a single capacitor from the GATE terminal to ground. M1 operates as a source follower (following the gate voltage) in this implementation. Choose a charge time, tON, based on the load capacitor, CO input voltage VI, and desired charge current. When power limiting is used (VPROG < VREF) choose ICHARGE to be less than PLIM /VVCC to prevent the fault timer from starting. The fault timer starts only if power or current limit is invoked. (26) Use the following equation to select the gate capacitance, CG. CISS is the gate capacitance of M1, and IGATE is the TPS2480/81 nominal gate charge current. As shown in Figure 17, a series resistor of about 1 k Ω should be used in series with CG. (27) If neither power nor current limit faults are invoked during turn on, CT can be chosen for fast transient turn off response using the M1 SOA curve. Choose the single pulse time conservatively from the M1 SOA curve using maximum operating voltage and maximum trip current. PROG Inrush Control A capacitor can be connected from the PROG pin to ground to reduce the initial current step seen in Figure 12. This method maintains a relatively fast turn-on time without the drawbacks of a gate-to-ground capacitor that include increased short circuit response time and less predictable gate clamping. 24 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS2480 TPS2481 |
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