| 전자부품 데이터시트 검색엔진 |
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BAV20WS 데이터시트(PDF) 1 Page - Shunxin Technology Co., Ltd. |
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BAV20WS 데이터시트(HTML) 1 Page - Shunxin Technology Co., Ltd. |
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1 / 3 page ![]() SWITCHING DIODE FEATURES Low Reverse Current Surface Mount Package Ideally Suited for Automatic Insertion Fast Switching Speed For General Purpose Switching Applications MARKING BAV19WS BAV20WS BAV21WS A8 T2 T3 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit BAV19WS BAV20WS BAV21WS VRM Non-Repetitive Peak Reverse Voltage 120 200 250 V VRRM Peak Repetitive Reverse Voltage 100 150 200 V VRWM Working Peak Reverse Voltage VR(RMS) RMS Reverse Voltage 71 106 141 V IO Average Rectified Output Current 200 mA IFSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 2.0 A IFRM Repetitive Peak Forward Surge Current 625 mA PD Power Dissipation 250 mW R。JA Thermal Resistance from Junction to Ambient 500 ℃ /W TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse current IR VR=100V BAV19WS 0.1 uA VR=150V BAV20WS 0.1 VR=200V BAV21WS 0.1 Forward voltage VF IF=100mA 1 V IF=200mA 1.25 Total capacitance Ctot VR=0V,f=1MHz 5 pF Reverse recovery time trr IF= IR =30mA, Irr=0.1*IR , RL=100Ω 50 ns SOD-323 BAV19WS/BAV20WS/BAV21WS 1 www.sxsemi.com |
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