Characteristics

BAR42, BAR43

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DocID3288 Rev 5

1

Characteristics

Table 2. Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VDRM

Repetitive peak off-state voltage

30

V

IF(AV)

Continuous forward current

0.1

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

0.75

A

Ptot

Power dissipation(1)

1.

For double diodes, Ptot is the total dissipation of both diodes

Tamb = 25 °C

250

mW

Tstg

Maximum Storage temperature range

- 65 to + 150

°C

Tj

Maximum operating junction temperature(2)

2.

condition to avoid thermal runaway for a diode on its own heatsink.

150

°C

TL

Maximum temperature for soldering during 10 s

260

°C

Table 3. Thermal parameter

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient(1)

1.

Mounted on epoxy board with recommended pad layout.

500

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR

Breakdown

voltage

Tj = 25 °C

IR = 100 µA

30

V

IR

(1)

1.

Pulse test: tp = 5 ms, δ < 2 %

Reverse leakage

current

Tj = 25 °C

VR = VRRM

500

nA

Tj = 100 °C

100

µA

VF

(2)

2.

Pulse test: tp = 380 µs, δ < 2 %

Forward voltage

drop

Tj = 25 °C

BAR42

IF = 10 mA

0.35

0.40

V

IF = 50 mA

0.50

0.65

BAR43

IF = 2 mA

0.26

0.33

IF = 15 mA

0.45

ALL

IF =100 mA

1

dPtot

dTj

<

1

Rth(j-a)