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STTH2003CG 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STTH2003CG
상세설명  300 V ultrafast rectifier
PDF  16 Pages
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AN604: Calculation of conduction losses in a power rectifier
AN4021: Calculation of reverse losses in a power diode
Table 4. Recovery characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Reverse recovery time
Tj = 25 °C
IF = 0.5 A, Irr = 0.25 A, IR = 1 A
-
25
ns
IF = 1 A, VR = 30 V,dIF/dt = -50 A/µs
-
35
tfr
Forward recovery time
Tj = 25 °C
IF = 10 A, VFR = 1.1 x VFmax, dIF/dt = 100 A/µs
-
230
ns
VFP
Peak forward voltage
Tj = 25 °C
IF = 10 A, dIF/dt = 100 A/µs
-
3.5
V
IRM
Reverse recovery current
Tj = 125 °C IF = 10 A, VCC = 200 V, dIF/dt = -200 A/µs
-
8
A
S factor Softness factor
-
0.3
-
1.1
Characteristics (curves)
Figure 1. Conduction losses versus average forward
current (per diode)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
P1(W)
T
δ=tp/T
tp
δ = 0.05
δ = 1
I
(A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
Figure 2. Forward voltage drop versus forward current
(maximum values, per diode)
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
1
10
100
200
I
(A)
FM
V
(V)
FM
T =25°C
j
T =75°C
j
T =125°C
j
Figure 3. Relative variation of thermal impedance junction
to case versus pulse duration (TO-220AB, D²PAK, I²PAK)
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration (TO-220FPAB)
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
STTH2003
Characteristics (curves)
DS1213 - Rev 12
page 3/16



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