| 전자부품 데이터시트 검색엔진 |
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HCC4536B 데이터시트(PDF) 7 Page - STMicroelectronics |
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HCC4536B 데이터시트(HTML) 7 Page - STMicroelectronics |
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7 / 17 page ![]() DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25 oC, CL =50 pF, RL = 200 K Ω, typical temperature coefficent for all VDD values is 03 %/ oC, all input rise and fall times= 20 ns) Symbol Parameter Test Conditions Value Unit VDD (V) Min. Typ. Max. tPLH tPHL Propagation Delay Time Clock to Q1, 8-bypass High 51 2 µs 10 0.5 1 15 0.35 0.7 Clock to Q1, 8-bypass Low 5 2.5 5 µs 10 0.8 1.6 15 0.6 1.2 Clock to Q16 5 4 8 µs 10 1.5 3 15 1 2 Qn to Qn+ 1 5 150 300 ns 10 75 150 15 50 100 tPLH Propagation Delay Time 5 300 600 ns 10 125 250 15 80 160 tPHL Reset to Qn 5 3 6 µs 10 1 2 15 0.75 1.5 tTLH tTHL Transition Time 5 100 200 ns 10 50 100 15 40 80 tW Pulse Width Clock 5 200 400 ns 10 75 150 15 50 100 Set 5 200 400 ns 10 100 200 15 60 120 Reset 5 3 6 µs 10 1 2 15 0.75 1.5 Recovery Time Set 5 2.5 5 µs 10 1 2 15 0.6 1.6 Reset 5 3.5 7 µs 10 1.5 3 15 1 2 tr,tf Clock Input Rise or Fall Time 5 Unlimted µs 10 15 fCL Maximum Clock Input Frequency 0.5 1 MHz 10 1.5 3 15 2.5 5 HCC/HCF4536B 7/17 |
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