IRF640S datasheet(1/8 Pages) STMICROELECTRONICS

부품명	IRF640S

상세설명	N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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IRF640S

N - CHANNEL 200V - 0.150

Ω - 18A TO-263

MESH OVERLAY

™ MOSFET

s

TYPICAL RDS(on) = 0.150

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using he

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

September 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC18

A

ID

Drain Current (continuous) at Tc =100

oC11

A

IDM (

•)

Drain Current (pulsed)

72

A

Ptot

T otal Dissipat ion at Tc =25

oC

125

W

Derating Factor

1.0

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

IRF640S

200 V

< 0.18

Ω

18 A

1

3

D

2PAK

TO-263

(suffix ”T4”)

1/8

유사한 부품 번호 - IRF640S

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	IRF640S	95Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
International Rectifier	IRF640S	228Kb / 10P	Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
Vishay Siliconix	IRF640S	2Mb / 8P	Power MOSFET 07-Jul-08
Vishay Siliconix	IRF640S	237Kb / 10P	Power MOSFET 18-Jan-16
Inchange Semiconductor ...	IRF640S	286Kb / 2P	isc N-Channel MOSFET Transistor 2023-8-23

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유사한 설명 - IRF640S

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	IRF630	104Kb / 9P	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET Feb-1999
	IRF630S	85Kb / 8P	N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET Dec-1998
	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET Oct-1999
	STD4N20	271Kb / 9P	N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY™ MOSFET Feb-2001
	STD7NS20	319Kb / 8P	N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY™ MOSFET Jun-2003
	STY100NS20FD	260Kb / 8P	N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY™ Power MOSFET Jan-2002
	STE110NS20FD	277Kb / 8P	N-CHANNEL 200V - 0.022W - 110A ISOTOP MESH OVERLAY™ Power MOSFET January 2002
	IRF630M	343Kb / 9P	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET Oct-2001
	IRF640T	247Kb / 12P	N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY??Power MOSFET 06-Oct-2006
	STD5N20	257Kb / 8P	N-CHANNEL 200V - 0.6W - 5A DPAK MESH OVERLAY??MOSFET Dec-2000

More results

IRF640S 데이터시트(PDF) 1 Page - STMicroelectronics

IRF640S 데이터시트(HTML) 1 Page - STMicroelectronics

유사한 부품 번호 - IRF640S

유사한 설명 - IRF640S

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