BC848CD datasheet(2/5 Pages) HUIXIN

부품명	BC848CD

상세설명	NPN/NPN Matched Double Transistors

PDF	5 Pages

Scroll/Zoom	100%

제조업체	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

홈페이지	http://www.hxkj.hk

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Characteristics at Ta = 25

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at VCE = 5 V, IC = 2 mA

BC846AD~BC848AD

BC846BD~BC848BD

BC846CD~BC848CD

hFE

110

200

420

220

450

800

Collector Base Voltage

at IC = 50 µA

BC846D

BC847D

BC848D

VCBO

Collector Emitter Voltage

at IC = 1 mA

BC846D

BC847D

BC848D

VCEO

Emitter Base Voltage

at IE = 50 µA

BC846D

BC847D

BC848D

VEBO

Collector Base Cutoff Current

at VCB = 30 V

ICBO

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

100

Collector Emitter Saturation Voltage

at IC = 10 mA, IB = 0.5 mA

at IC = 100 mA, IB = 5 mA

VCE(sat)

0.25

0.6

Base Emitter Voltage

at VCE = 5 V, IC = 2 mA

at VCE = 5 V, IC = 10 mA

VBE

0.58

0.7

0.77

Transition Frequency

at VCE = 5 V, IC = 10 mA, f = 100 MHz

100

MHz

Collector Output Capacitance

at VCB = 10 V, IE = 0, f = 1 MHz

Cob

4.5

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