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L3100B 데이터시트(PDF) 3 Page - STMicroelectronics |
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L3100B 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() Type VGN @IGN = 200 mA IGN @VAC = 100V VRGN @IG = 1mA IGP @VAC = 100V min. max. min. max. min. max. V V mA mA V mA L3100B/B1 0.6 1.8 30 200 0.7 150 Note 1 : See the reference test circuits for IH,IBO and VBO parameters. Note 2 : VR = 5 V, F = 1MHz. OPERATION WITH GATES I pp IBO IH IRM V RM V BR V BO I V Symbol Parameter VRM Stand-off voltage IRM Reverseleakagecurrent VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current VGN Gate voltage IGN,IGP Triggering gate current VRGN Reverse gate voltage C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) Type IRM @VRM VBR @IR VBO @IBO IH C max. min. max. min. max. min. max. note 1 note 1 note 2 µA V V mA V mA mA mA pF L3100B 6 40 60 250 265 1 350 200 500 280 100 L3100B1 6 40 60 250 255 1 350 200 500 210 100 OPERATION WITHOUT GATE L3100B/L3100B1 3/8 |
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