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L3121B 데이터시트(PDF) 3 Page - STMicroelectronics |
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L3121B 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() Symbol Parameter VRM Stand-off voltage IRM Reverse leakage current VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current VGN Gate voltage IGN,IGP Triggering gate current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) I IBO IH VRM VBR VBO IPP Type IRM @VRM VBR @IR VBO @IBO IH C max. min. max. typ. max. min. max. note 1 note 1 note 2 µA V V mA V mA mA mA pF L3121B 5 8 60 90 100 1 180 200 500 150 200 1- OPERATION WITHOUT GATE Type VGN @IGN = 200mA IGN @VAC = 60V IGP @VAC = 60V min. max. min. max. max. V V mA mA mA L3121B 0.6 1.8 80 200 180 2- OPERATION WITH GATE Note 1 :See the reference test circuits for IH,IBO and VBO parameters. Note 2 :VR = 5 V, F = 1MHz. L3121B 3/7 |
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