| 전자부품 데이터시트 검색엔진 |
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L4949ED 데이터시트(PDF) 2 Page - STMicroelectronics |
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L4949ED 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VSDC DC Operating Supply Voltage 28 V VSTR Transient Supply Voltage (T < 1s) 40 V IO Output Current Internally Limited VO Output Voltage 20 V VRES,VSO Output Voltage 20 V IRES,ISO Output Current 5 mA VZ Preregulator Output Voltage 7 V IZ Preregulator Output Current 5 mA TJ Junction Temperature -40 to +150 °C Tstg Storage Temperature Range -55 to +150 °C Note: The circuit is ESD protected according to MIL-STD-883C THERMAL DATA Symbol Description Minidip SO-8 SO20L Unit Rth j-amb Thermal Resistance Junction-ambient Max 100 200 50 °C/W Rth j-pins Thermal Resistance Junction-pins Max 15 °C/W TJSD Thermal Shutdown Junction temperature 165 °C PIN CONNECTIONS VS SI VZ CT GND RES SO VOUT 1 3 2 4 6 5 7 8 D95AT217 VZ CT N.C. GND GND GND GND N.C. N.C. VOUT N.C. GND GND GND GND N.C. VS SI 1 3 2 4 5 6 7 8 9 18 17 16 15 14 12 13 11 19 10 20 RES SO D95AT218 MINIDIP/SO8 SO20 L4949E 2/10 |
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