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RF2442PCBA-L 데이터시트(PDF) 2 Page - RF Micro Devices

부품명 RF2442PCBA-L
상세설명  HIGH-LINEARITY LOW NOISE AMPLIFIER
PDF  12 Pages
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제조업체  RFMD [RF Micro Devices]
홈페이지  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2442PCBA-L 데이터시트(HTML) 2 Page - RF Micro Devices

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RF2442
Rev B8 DS080128
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
V
DC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
RF Frequency Range
500 to 2500
MHz
Requires input tuning inductor below 1GHz
881MHz Performance
Schematic Evaluation Board L (RC=0),
T=25°C, RF=881MHz
Gain
18
20
22
dB
V
CC =3.6 V
17
19
21
dB
V
CC =3.0 V
16
18
20
dB
V
CC =2.5 V
Output P1dB
+13
dBm
V
CC =3.6 V
+11
dBm
V
CC =3.0 V
Output IP3
+21
+27
dBm
V
CC =3.6 V
+16
+22
dBm
V
CC =3.0 V
+10
+16
dBm
V
CC =2.5 V
Noise Figure
1.6
2.5
dB
V
CC =3.6 V
1.5
2.5
dB
V
CC =3.0 V
1.4
2.5
dB
V
CC =2.5 V
Reverse Isolation
22
24
dB
V
CC =3.6 V
22
24
dB
V
CC =3.0 V
21
23
dB
V
CC =2.5 V
1960MHz Performance
Schematic Evaluation Board M (RC=0),
T=25°C, RF=1960MHz
Gain
10
12
14
dB
V
CC =3.6 V
10
12
14
dB
V
CC =3.0 V
10
12
14
dB
V
CC =2.5 V
Output P1dB
+16
dBm
V
CC =3.6 V
+13
dBm
V
CC =3.0 V
Output IP3
+20
+26
dBm
V
CC =3.6 V
+15
+21
dBm
V
CC =3.0 V
+9
+15
dBm
V
CC =2.5 V
Noise Figure
1.6
2.3
dB
V
CC =3.6 V
1.5
2.1
dB
V
CC =3.0 V
1.4
2.0
dB
V
CC =2.5 V
Reverse Isolation
18
20
dB
V
CC =3.6 V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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