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H4RN10FP 데이터시트(PDF) 3 Page - Guangdong Huixin Electronic Technology Co., Ltd.

부품명 H4RN10FP
상세설명  N-Channel 100 V MOSFET
PDF  5 Pages
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제조업체  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
홈페이지  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H4RN10FP 데이터시트(HTML) 3 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Electrical Characteristics Diagrams
Fig.4 Typical Gate-Charge
(
)
Gate-Charge-Q
nC
g
0
40
30
10
2
20
4
6
8
10
12
V =50V
D S
I =25A
D
0
1
Fig.1
output characteristics
Typical
0
( )
Drain-Source Voltage-V
V
D S
100
0
2
3
4
5
T =25
°C
J
t =﹤200μs
p
V =5V
G S
50
150
175
250
V =5.5V
G S
V =6V
G S
V =7V
G S
V =10V
G S
V =8V
G S
Fig.2
transfer characteristics
Typical
Gate-Source Voltage-V
(V)
G S
0
100
0
6
8
T =25
°C
J
50
150
175
250
2
4
10
T =150
°C
J
Drain-Source Voltage-V
(V)
D S
20
40
60
80
100
0
10
Fig.3 Typical Capacitance vs. D-S Voltage
0
1
10
2
10
3
10
4
10
V =0
G S
f =100kHz
Crss
Coss
Ciss
Fig.5 Drain-source on-state resistance
0
2
4
6
-25
75
125
(
)
Junction Temperature-T
°C
J
150
100
50
25
0
I =25A
D
V =10V
G S
-50
8
Fig.6 Drain-source on-state resistance
250
( )
Drain current-I
A
D
200
150
50
0
0
5
10
15
20
25
100
V =7V
G S
V =8V
G S
V =10V
G S
V =6.5V
G S
V =6V
G S
www.hxkj.hk
+86-769-23622090
huixin@hxkj.hk
Rev.02
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