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H18N20HD 데이터시트(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

부품명 H18N20HD
상세설명  200V N-Channel MOSFET
PDF  7 Pages
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제조업체  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
홈페이지  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H18N20HD 데이터시트(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Rev.01
Page 2 of 7
Electrical Characteristics ( TJ= 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Test Conditions
V(BR)DSS Drain- Source Breakdown Voltage
200
--
--
V
VGS=0V,ID=250µA
IDSS
Zero Gate Voltage Drain Current (25℃)
--
--
1
µA
VDS=200V,VGS=0V
IGSS
Gate to Source Forward Leakage
--
--
100
nA
VGS=30V ,VDS=0V
Gate to Source Reverse Leakage
--
--
-100
VGS=-30V ,VDS=0V
VGS(TH) Gate Threshold Voltage
2
3
4
V
VGS=VDS,ID=250µA
RDS(on) Static Drain- to- Source On-
Resistance
--
130
180
mΩ
VGS=10V,ID=7.5A
Dynamic Electrical Characteristics
Ciss
Input Capacitance
--
1320
--
pF
VGS=0V
VDS=25V
f=1MHz
Coss
Output Capacitance
--
450
--
Crss
Reverse Transfer Capacitance
--
130
--
Rg
Gate Resistance
--
2
--
Ω
f=1MHz
Qg
Total Gate Charge
--
23
--
nC
VDS=160V
ID=18A
VGS=10V
Qgs
Gate- to- Source Charge
--
8
--
Qgd
Gate-to-Drain(" Miller") Charge
--
6
--
Switching Characteristics
td(ON)
Turn- on Delay Time
--
15
--
nS
VDS=100V
ID=18A
RG=20Ω
VGS=10V
trise
Rise Time
--
52
--
td(OFF) Turn- OFF Delay Time
--
46
--
tfall
Fall Time
--
37
--
Source- Drain Diode Characteristics
VSD
Diode Forward Voltage
--
--
1.2
V
IF=18A,VGS=0V
trr
Reverse Recovery Time
--
350
--
nS
VGS=0V,IF=18A
di/dt=100A/µs
Qrr
Reverse Recovery Charge
--
3.6
--
uC



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