| 전자부품 데이터시트 검색엔진 |
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LM3999Z 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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LM3999Z 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
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3 / 10 page ![]() Electrical Characteristics (Notes 3, 6) (Continued) Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: The substrate is electrically connected to the negative terminal of the temperature stabilizer. The voltage that can be applied to either terminal of the reference is 40V more positive or 0.1V more negative than the substrate. Note 3: These specifications apply for 30V applied to the temperature stabilizer and −55˚C ≤TA≤+125˚C for the LM199; −25˚C≤TA≤+85˚C for the LM299 and 0˚C ≤TA≤+70˚C for the LM399. Note 4: This initial current can be reduced by adding an appropriate resistor and capacitor to the heater circuit. See the performance characteristic graphs to determine values. Note 5: Do not wash the LM199 with its polysulfone thermal shield in TCE. Note 6: A military data sheet is available for the LM199AH/833 and LM199AH-SMD (SMD#5962-88561) upon request. Functional Block Diagram LM199/LM299/LM399 00571715 www.national.com 3 |
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