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L6590 데이터시트(PDF) 2 Page - STMicroelectronics |
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L6590 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 23 page ![]() L6590 2/23 DESCRIPTION (continued) The MOSFET is source-grounded, thus it is possible to build flyback, boost and forward converters. The device can work with secondary feedback and a 2.5V±2% internal reference, in addition to a high gain error amplifier, makes possible also the use in appli- cations either with primary feedback or not isolated. The internal fixed oscillator frequency and the integrated non dissipative start-up generator minimize the external component count and power consumption. The device is equipped with a standby function that automatically reduces the oscillator frequency from 65 to 22 kHz under light load conditions to enhance efficiency (Pin <1W @ Pout = 0.5W with wide range mains). Internal protections like cycle-by-cycle current limiting, latched output overvoltage protection, mains undervolt- age protection (SMD version only) and thermal shut- down generate a 'robust' design solution. The IC uses a special leadframe with the ground pins (6, 7 and 8 in minidip, 9 to16 in SO16W package) in- ternally connected in order for heat to be easily re- moved from the silicon die. An heatsink can then be realized by simply making provision of few cm2 of copper on the PCB. Furthermore, the pin(s) close to the high-voltage one are not connected to ease com- pliance with safety distances on the PCB. BLOCK DIAGRAM PIN CONNECTIONS (Top view) SUPPLY &UVLO OVP OCP + - + - 2.5V + - DRAIN (1) [1] VCC (3) [4] BOK [6] COMP (4) [7] GND (6,7,8) PGND [9, ..., 16] VREF BROWNOUT PWM STANDBY START-UP OSC 65/22 kHz THERMAL SHUTDOWN 2.5V - + VFB (5) [8] VREF SGND [5] [x] : L6590D (SO16W) VFB DRAIN N.C. Vcc COMP GND GND GND MINIDIP L6590 DRAIN N.C. N.C. Vcc SGND BOK COMP VFB PGND PGND PGND PGND PGND PGND PGND PGND SO16W L6590D |
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