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TS881 데이터시트(PDF) 9 Page - STMicroelectronics |
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TS881 데이터시트(HTML) 9 Page - STMicroelectronics |
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9 / 21 page ![]() DocID023340 Rev 2 9/21 TS881 Electrical characteristics 21 Table 6. VCC =+5V, Tamb =+25 °C, VICM =VCC/2 (unless otherwise specified)(1) Symbol Parameter Test conditions Min. Typ. Max. Unit VIO Input offset voltage(2) -40 °C < Tamb < +125 °C -6 1 6 mV VIO Input offset voltage drift -40 °C < Tamb < +125 °C 3 µV/°C VHYST Input hysteresis voltage(3) -40 °C < Tamb < +125 °C 1.6 3.1 4.2 mV IIO Input offset current(4) -40 °C < Tamb < +125 °C -10 -100 10 100 pA IIB Input bias current(4) -40 °C < Tamb < +125 °C -10 -100 110 100 pA ICC Supply current per operator No load, output low, VID = -0.1 V -40 °C < Tamb < +85 °C -40 °C < Tamb < +125 °C No load, output high, VID = +0.1 V -40 °C < Tamb < +85 °C -40 °C < Tamb < +125 °C 350 250 500 750 1350 400 650 1250 nA ISC Short-circuit current Source Sink 32 36 mA VOH Output voltage high Isource =2mA -40 °C < Tamb < +85 °C -40 °C < Tamb < +125 °C 4.86 4.75 4.60 4.90 V VOL Output voltage low Isink =2mA -40 °C < Tamb < +85 °C -40 °C < Tamb < +125 °C 95 130 170 280 mV CMRR Common mode rejection ratio 0 < VICM < VCC -40 °C < Tamb < +125 °C 55 78 dB SVR Supply voltage rejection VCC = 1.2 V to 5 V -40 °C < Tamb < +125 °C 65 80 dB TPLH Propagation delay (low to high) f=1kHz,CL =30 pF, RL =1M Overdrive = 10 mV -40 °C < Tamb < +125 °C Overdrive = 100 mV -40 °C < Tamb < +125 °C 7.8 2.6 13 22 3.4 4.1 µs TPHL Propagation delay (high to low) f=1kHz,CL =30 pF, RL =1M Overdrive = 10 mV -40 °C < Tamb < +125 °C Overdrive = 100 mV -40 °C < Tamb < +125 °C 8.9 2.7 16 19 3.5 4.2 µs TR Rise time (10% to 90%) CL =30pF, RL =1M 160 ns TF Fall time (90% to 10%) CL =30pF, RL =1M 150 ns TON Power-up time 1.1 1.5 ms 1. All values over the temperature range are guaranteed through correlation and simulation. No production test is performed at the temperature range limits. 2. The offset is defined as the average value of positive and negative trip points (input voltage differences requested to change the output state in each direction). 3. The hysteresis is a built-in feature of the TS881 device. It is defined as the voltage difference between the trip points. 4. Maximum values are guaranteed by design. |
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