| 전자부품 데이터시트 검색엔진 |
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L702 데이터시트(PDF) 3 Page - STMicroelectronics |
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L702 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() Symbol Parameter Value Unit Rth j-amb Thermal Resistance Junction Ambient Powerdip Max 70 °C/W Rth j-pins 9/16 Thermal Resistance Junction Pins 9 to 16 Max 14 °C/W Rth j-case Thermal Resistance Junction-case Multiwatt Max 3 °C/W THERMAL DATA } Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Output Leakage Current VCE = 90 V 10 50 µA VCE(sust) Collector Emitter ( °) Sustaining Voltage IC = 100 mA 70 V VCE(sat) Collector Emitter Saturation Voltage IC = 1.25 A Ii = 2 mA 1.3 1.9 V hFE DC Forward Current Gain IC = 1 A VCE = 3 V 1.000 4.000 Ii Input Current Vi = 3.75 V Vi = 2.4 V Open Collector 7 3 11 6 mA mA Vi Input Voltage Off Condition VCE = 70 V IC ≤ 0.1 mA 0.4 V On Condition VCE = 3 V IC ≥ 1 A 2.4 V Ton Turn On Time Vs = 12 V 0.3 µs Toff Turn Off Time RL = 10 Ω 1 µs ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) Figure 1. Switching Time. Figure 2. ton and toff Test Circuit. 3/7 L702 |
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