General Purpose Transistor

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

IC = -100μA, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

IC = -1mA, IB = 0

IE = -100μA, IC = 0

V(BR)CBO

V(BR)CEO

V(BR)EBO

-40

-40

-5

V

V

V

nA

-100

VCE = -35V, IB = 0

ICBO

-100

Collector cut-off current

VCE = -4V, IC = 0

IEBO

DC current gain

VCE = -2V, IC = -150mA

hFE

300

100

Collector-emitter saturation voltage

IC = -500mA, IB = -50mA

VCE(sat)

-0.4

-0.75

IC = -150mA, IB = -15mA

Base-emitter saturation voltage

IC = -500mA, IB = -50mA

VBE(sat)

-1.3

IC = -150mA, IB = -15mA

-0.95

Delay time

Storage time

Rise time

Fall time

VCC = -3V, VEB = -2V,

IC = -150mA, IB1 = -15mA

VCC = -3V, IC = -150mA,

td

tr

ts

tf

15

20

225

30

ns

ns

Transition frequency

200

MHz

fT

VCE = -10V, IC = -20mA, f = 100MHZ

IB1 = IB2 = -15mA

AQW-JTR27

Page 2

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Comchip Technology CO., LTD.

Collector cut-off current

Base cut-off current

-100

VCE = -35V, IE = 0

ICEO

nA

nA

V

V