STPS20M60D datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

Characteristics

STPS20M60

4/7

Doc ID 022037 Rev 1

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values)

Figure 7.

Relative thermal impedance

junction to case versus pulse

duration

100

150

200

250

300

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ = 0.5

T = 25 °C

T = 75 °C

T = 125 °C

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

Single pulse

t (s)

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

2030

4050

I (mA)

V (V)

T = 25 °C

T = 50 °C

T = 75 °C

T = 125 °C

T = 150 °C

T = 100 °C

100

1000

10000

100

C(pF)

V (V)

F = 1 MHz

= 30 mV

T = 25 °C

osc

RMS

Figure 10.

Forward voltage drop versus

forward current

Figure 11.

Reverse safe operating area

(tp < 1 µs and Tj < 150 °C)

0.1

1.0

10.0

100.0

1000.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

(A)

(Maximum values)

T = 25 °C

(Maximum values)

T = 125 °C

(Typical values)

T = 125 °C

(V)

40.0

50.0

60.0

70.0

80.0

90.0

100.0

110.0

100

105

110

115

120

(A)

arm

) 150 °C, 1µs

arm

(V)

arm

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