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28F320C3 데이터시트(PDF) 39 Page - Intel Corporation

부품명 28F320C3
상세설명  Advanced Boot Block Flash Memory (C3)
PDF  68 Pages
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제조업체  INTEL [Intel Corporation]
홈페이지  http://www.intel.com
Logo INTEL - Intel Corporation

28F320C3 데이터시트(HTML) 39 Page - Intel Corporation

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Intel£ Advanced+ Boot Block Flash Memory (C3)
Datasheet
39
8.0
AC Characteristics
8.1
AC Read Characteristics
Table 13. Read Operations—8 Mbit Density
#Sym
Parameter
Density
8 Mbit
Unit
Product
90 ns
110 ns
VCC
3.0V –3.6 V
2.7 V – 3.6V
3.0V –3.6 V
2.7 V – 3.6V
Note
Min
Max
Min
Max
Min
Max
Min
Max
R1
tAVAV
Read Cycle Time
3,4
80
90
100
110
ns
R2
tAVQV
Address to Output Delay
3,4
80
90
100
110
ns
R3
tELQV
CE# to Output Delay
1,3,4
80
90
100
110
ns
R4
tGLQV
OE# to Output Delay
1,3,4
30
30
30
30
ns
R5
tPHQV
RP# to Output Delay
3,4
150
150
150
150
ns
R6
tELQX
CE# to Output in Low Z
2,3,4
0
0
0
0
ns
R7
tGLQX
OE# to Output in Low Z
2,3,4
0
0
0
0
ns
R8
tEHQZ
CE#toOutput inHighZ
2,3,4
20
20
20
20
ns
R9
tGHQZ
OE#toOutput inHighZ
2,3,4
20
20
20
20
ns
R10
tOH
Output Hold from
Address, CE#, or OE#
Change, Whichever
Occurs First
2,3,4
0
0
0
0
ns
NOTES:
1. OE#may be delayeduptotELQV–tGLQV after the falling edge of CE# without impact on tELQV.
2. Sampled, but not 100% tested.
3. See Figure 8, “Read Operation Waveform” on page 42.
4. See Figure 11, “AC Input/Output Reference Waveform” on page 49 for timing measurements and maximum allowable input
slew rate.



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