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L9611C 데이터시트(PDF) 6 Page - STMicroelectronics

부품명 L9611C
상세설명  PWM POWER MOS CONTROLLER
PDF  12 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9611C 데이터시트(HTML) 6 Page - STMicroelectronics

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Figure 2 : The Typical Waveforms for the Power Limitation Function.
SHORT CIRCUIT CURRENT REGULATION
The maximum load current in the short circuit con-
dition can be chosen by the value of the current
sensing resistor RS according to :
ISC =VSI/RS
Two identical VS compatible comparators are pro-
vided to realize the short circuit protection.
After reaching the lower threshold voltage (typical
value VSI-10 mV), the first comparator enables the
timer and the gate is driven with the full continuous
pump voltage : when the upper threshold voltage
value is reached the second comparator maintains
the chosen ISC driving the NMOS gate in continuous
mode.
This function - showed in fig. 3 - speeds up the
switch on phase for a lamp as a load.
BANDGAP VOLTAGE REFERENCE
The circuit provides a reference voltage which may
be used as control input voltage through a resistive
divider. This reference is protected against the short
circuit current.
CHARGE PUMP
The charge pump circuit holds the N-MOS gate
above the supply voltage during the ON phase. This
circuit consists of an RC astable which drives a com-
parator with a push-pull output stage. The external
charge pump capacitor CP must be at least equal to
the NMOS parasitic input capacitance.
For fast gate voltage variation CP must be increased
or the bootstrap function can be used. The bootstrap
capacitor should be at least 10 times greater than
the powerMOS parasitic capacitance.
The charge pump voltage VPUMP can reach to :
VPUMP =2 VS -VBE -VCESAT
The circuit is disabled if the supply voltage is higher
than VSH.
L9610C - L9611C
6/12



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