INTEGRATED CIRCUITS DIVISION

CPC1590

4

www.ixysic.com

R03

1.6 General Conditions

Unless otherwise specified, minimum and maximum values are guaranteed by production testing.

Typical values are characteristic of the device at 25°C and are the result of engineering evaluations. They are

provided for informational purposes only and are not part of the manufacturing testing requirements.

Unless otherwise noted, all electrical specifications are listed for TA=25°C.

1.7 Electrical Specifications

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Load Side Characteristics

Gate Voltage

IF=2.5mA

7.0

7.3

IF=5mA

7.5

8.0

12

IF=10mA

VGS

8.4

V

IF=2.5mA

4.2

-

14.4

-40°C<TA<110°C

Capacitor Voltage

10V<VDS<200V

VCAP

10

12.2

16

V

Gate Drive Capability

IF=2.5mA, VGS=0V, VCAP=15V

IG_source

23.3

7

IF=0mA, VGS=8V, VCAP=8V

4.0

9.0

14

mA

IF=0mA, VGS=4V, VCAP=4V

IG_sink

1.5

3.3

6

IF=0mA, VGS=2V, VCAP=2V

0.5

1.2

2

Turn-On Delay

VDS=48V, VGS=4V, CVG=4nF

IF=2.5mA

ton

40

140

s

IF=5mA

1

12

40

IF=10mA

5

20

Turn-Off Delay

VDS=48V, VGS=2V, CVG=4nF

IF=2.5mA

toff1

110

s

IF=5mA

40

125

400

IF=10mA

130

VDS=48V, VGS=1V, CVG=4nF

IF=2.5mA

toff2

200

IF=5mA

40

210

600

s

IF=10mA

220

Off-State Leakage Current

VDS=200V

IDS

--

1

A

LED Characteristics

Forward Voltage Drop

IF=5mA

VF

11.23

1.5

V

Input Dropout Current

VGS=1V

IF

0.2

0.75

1

mA

Reverse Bias Leakage Current

VR=5V

IR

--

10

A

Common Characteristics

Input to Output Capacitance

-

CIO

-3

-

pF