APT100GH120JSC50

Device Specifications

 Data Sheet

© 2025 Microchip Technology Inc. and its subsidiaries

DS00006271A - 4

1.4.

Typical Performance Curves

Data for performance curves are characterized, not 100% tested.

Figure 1-1. Output Characteristics

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1

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5

0

20

40

60

80

100

120

140

160

180

200

220

240

260

280

300

VCE, Collector-to-Emitter Voltage (V)

TJ = -55 °C

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

TJ = 175 °C

VGE = 15 V

Figure 1-2. Transfer Characteristics

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10

0

40

80

120

160

200

240

280

320

VGE, Gate-to-Emitter Voltage (V)

TJ = –55 °C

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

TJ = 175 °C

250 s Pulse Test

<0.5% Duty Cycle

Figure 1-3. Gate Charge

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2

4

6

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Gate Charge (nC)

IC = 100 A

TJ = 25 °C

VGE = 240 V

VCE = 600 V

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200

400

600

800

Figure 1-4. On-State Voltage vs. Gate-to-Emitter Voltage

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10 11 12 13 14 15 16

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1

2

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4

VGE, Gate-to-Emitter Voltage (V)

TJ = 25 °C

250 s Pulse Test

<0.5% Duty Cycle

IC = 50 A

IC = 200 A

IC = 100 A