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TP65H015G5WS 데이터시트(PDF) 6 Page - Renesas Technology Corp |
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TP65H015G5WS 데이터시트(HTML) 6 Page - Renesas Technology Corp |
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6 / 13 page ![]() TP65H015G5WS Datasheet R07DS1669EU0400 Rev.4.00 Nov 25, 2025 Page 6 2.4 Electrical Specifications – Reverse Device TJ = 25°C unless otherwise stated. Symbol Parameter Test Conditions Minimum Typical Maximum Unit IS Reverse current VGS = 0V, TC = 100°C, ≤ 15% duty cycle - - 60 A VSD Reverse voltage [1] VGS = 0V, IS =60A - 1.6 - V VGS = 0V, IS = 30A - 1.2 - 1. Includes dynamic RDS(on) effect. Note: Reverse recovery charge is negligible, enabled by the LV Si FET technology |
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