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TP65H030G4PRS 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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TP65H030G4PRS 데이터시트(HTML) 4 Page - Renesas Technology Corp |
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4 / 17 page ![]() TP65H030G4PRS Datasheet R07DS1602EU0201 Rev.2.01 Dec 2, 2025 Page 4 2. Specifications 2.1 Absolute Maximum Ratings Tc = 25°C unless otherwise stated. Caution: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty. Symbol Parameter Minimum Maximum Unit VDSS Drain to source voltage (TJ = -55°C to 150°C) - 650 V VDSS(TR) , non-repetitive Transient drain to source voltage, non-repetitive [1] - 800 VDSS(TR) , repetitive Transient drain to source voltage, repetitive [2] - 750 VGSS Gate to source voltage -20 +20 PD Maximum power dissipation at TC = 25°C - 192 W ID Continuous drain current at TC = 25°C - 55.7 A Continuous drain current at TC = 100°C - 35 A IDM Pulsed drain current (pulse width: 10µs) - 230 A TJ Operating temperature junction -55 +150 °C TS Storage temperature -55 +150 °C TSOLD Reflow soldering temperature [3] - 260 °C 1. In off-state, spike duration < 30µs, non-repetitive. 2. Off-state, spike duration < 5µs. 3. Reflow MSL3. 2.2 Thermal Specifications Symbol Condition Typical Value Unit RΘJC Junction-to-case 0.65 °C/W RΘJA Junction-to-ambient 40 |
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