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DS1284 데이터시트(PDF) 13 Page - Dallas Semiconductor |
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DS1284 데이터시트(HTML) 13 Page - Dallas Semiconductor |
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13 / 18 page ![]() DS1284/DS1286 13 of 18 POWER-UP/POWER-DOWN CONDITION PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CE at VIH before Power-Down tPD 0 µs VCC Slew from 4.5V to 0V (CE at VIH) tF 350 µs VCC Slew from 0V to 4.5V (CE at VIH) tR 100 µs CE at VIH after Power-Up tREC 150 ns POWER-DOWN/POWER-UP CONDITION (TA = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Data-Retention Time (DS1286) tDR 10 years 9 WARNING: Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery-backup mode. |
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