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TP70H480G4JSG 데이터시트(PDF) 6 Page - Renesas Technology Corp |
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TP70H480G4JSG 데이터시트(HTML) 6 Page - Renesas Technology Corp |
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6 / 13 page ![]() TP70H480G4JSG Datasheet R07DS1594EU0102 Rev.1.02 Nov 21, 2025 Page 6 2.4 Electrical Specifications – Reverse Device TJ = 25°C unless otherwise stated. Symbol Parameter Test Conditions Minimum Typical Maximum Unit IS Reverse current VGS = 0V, TC = 100°C, ≤ 25% duty cycle - - 3.1 A VSD Reverse voltage [1] VGS = 0V, IS = 1.3A - 1.3 - V VGS = 0V, IS = 2.6A - 1.8 - 1. Includes dynamic RDS(on) effect. Note: Reverse recovery charge is negligible enabled by the LV Si FET technology |
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