6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) (2)

MIN

MAX

UNIT

VIN

IN pin voltage

–0.3

7

V

VOUT

OUT pin voltage

-0.3

7

V

VEN

EN pin voltage

–0.3

7

V

VPG

PG pin voltage

–0.3

7

V

TJ

Junction temperature

–55

150

°C

PDISS

Continuous power dissipation(3)

Internally Limited

W

Tstg

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

Internal thermal shutdown circuitry protects the device from permanent damage.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage

1.6

6.5

V

VOUT

Output voltage

0.8

5.5

V

VEN

EN input voltage

0

VIN

V

VPG

PG pin off voltage

0

6.5

V

IOUT

Output current

0

500

mA

TJ-MAX-OP

Operating junction temperature

–55

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

LP5912-EP

UNIT

DRV (WSON)

6 PINS

RθJA

Junction-to-ambient thermal resistance

75.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

92.6

°C/W

RθJB

Junction-to-board thermal resistance

40.0

°C/W

ψJT

Junction-to-top characterization parameter

3.3

°C/W

ψJB

Junction-to-board characterization parameter

40.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

15.4

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application

report.

LP5912-EP

SNVSC57 – SEPTEMBER 2022

www.ti.com

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