Potens semiconductor corp.

Ver.1.06

1

PDC6901X

60V P-Channel MOSFETs

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous (TC=25

℃)

-72

A

Drain Current

– Continuous (TC=100

℃)

-45.5

A

IDM

Drain Current

– Pulsed1

-288

A

EAS

Single Pulse Avalanche Energy2

320

mJ

IAS

Single Pulse Avalanche Current2

-80

A

PD

Power Dissipation (TC=25

℃)

142

W

Power Dissipation

– Derate above 25

℃

1.13

W/

℃

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJC

Thermal Resistance Junction to Case

---

0.88

℃/W

RθJA

Thermal Resistance Junction to Ambient

---

62

℃/W

BVDSS

RDSON

ID

-60V

8.6m



-72A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -60V,-72A, RDS(ON) =8.6mΩ@VGS = -10V

 Fast switching

 Green Device Available

 Suit for -4.5V Gate Drive Applications

General Description

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

Thermal Characteristics

Applications

PPAK5X6 Pin Configuration

D

G

S

 POL Applications

 Load Switch

 LED Application

D D

D

S S

D

S

G

D D

D

S

S

D

G

S