Potens semiconductor corp.

Ver.1.02

1

PDC6906Z

60V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous (TC=25

℃)

33

A

Drain Current

– Continuous (TC=100

℃)

20

A

IDM

Drain Current

– Pulsed1

132

A

EAS

Single Pulse Avalanche Energy2

42

mJ

IAS

Single Pulse Avalanche Current2

29

A

PD

Power Dissipation (TC=25

℃)

44.6

W

Power Dissipation

– Derate above 25

℃

0.36

W/

℃

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction to ambient

---

62

℃/W

RθJC

Thermal Resistance Junction to Case

---

2.8

℃/W

BVDSS

RDSON

ID

60V

21m



33A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 60V, 33A, RDS(ON) =21m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

Thermal Characteristics

Applications

PPAK3X3 Pin Configuration

D

G

S

D

G

S

 Motor Drive

 Power Tools

 LED Lighting

D

D D

S

S