Potens semiconductor corp.

Ver.1.02

2

PDC6907Z

60V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250uA

-60

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.05

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=

-60V , VGS=0V , TJ=25

℃

---

---

-1

uA

VDS=

-48V , VGS=0V , TJ=125

℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-10V , ID=-8A

---

54

65

m



VGS=

-4.5V , ID=-6A

---

70

90

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID=

-250uA

-1.2

-1.6

-2.2

V

△VGS(th)

VGS(th) Temperature Coefficient

---

5

---

mV/

℃

gfs

Forward Transconductance

VDS=

-10V , ID=-3A

---

7

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=

-30V , VGS=-10V , ID=-3A

---

16.4

23

nC

Qgs

Gate-Source Charge3 , 4

---

2.8

4

Qgd

Gate-Drain Charge3 , 4

---

3.6

6

Td(on)

Turn-On Delay Time3 , 4

VDD=

-30V , VGS=-10V , RG=6

ID=

-1A

---

8.3

16

ns

Tr

Rise Time3 , 4

---

29.6

56

Td(off)

Turn-Off Delay Time3 , 4

---

51.7

98

Tf

Fall Time3 , 4

---

15.6

30

Ciss

Input Capacitance

VDS=

-30V , VGS=0V , F=1MHz

---

870

1260

pF

Coss

Output Capacitance

---

70

100

Crss

Reverse Transfer Capacitance

---

42

60

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

16

32



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-14

A

ISM

Pulsed Source Current

---

---

-28

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25

℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-25A.,RG=25

,Starting T

J

=25

℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings