MRF5S4125NR1 MRF5S4125NBR1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 500 MHz. The high gain and broadband performance of

these devices make them ideal for large - signal, common - source amplifier

applications in 28 volt base station equipment.

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 23 dB

Drain Efficiency — 30.2%

ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• 200°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Storage Temperature Range

- 65 to +150

°C

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 90°C, 125 W CW

Case Temperature 90°C, 25 W CW

0.33

0.43

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF5S4125N

Rev. 0, 1/2007

Freescale Semiconductor

Technical Data

MRF5S4125NR1

MRF5S4125NBR1

450-480 MHz, 25 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 1484-04, STYLE 1

TO-272 WB-4

MRF5S4125NBR1

CASE 1486-03, STYLE 1

TO-270 WB-4

MRF5S4125NR1

© Freescale Semiconductor, Inc., 2007. All rights reserved.