FEATURES

ABSOLUTE RATINGS

Power dissipation on printed

TA=50

oC

Pc

mW

Repetitive peak on-state

tp=20

S

current

f=120Hz

ITRM

A

Operating junction temperature

TJ

oC

Storage temperature

TSTG

oC

Min

28

35

Typ

32

40

Max

36

45

Output voltage (NOTE 1)

Vo

Min

V

Breakover current (NOTE 1)

IBO

Max

A

Rise time (NOTE 1)

tr

Typ

S

Leakage current (NOTE 1)

IR

Max

A

2. Connected in parallel w ith the devices

NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.

5.0

5.0

100.0

1.5

V

R=0.5 VBO

See FIG.1

10.0

C=22nf(NOTE 2)

Breakover voltage (NOTE 1)

Breakover voltage symmetry

Dynamic breakover voltage (NOTE 1)

VBO

UNITS

150.0

I+VBO I-

I-VBOI

I±

VI

C=22nf(NOTE 2)

See FIG.1

I=(IBO to IF=10mA)

See FIG.1

V

V

±3.0

V

Parameters

Symbols

UNITS

LLDB3,LLDB4

The three layer,two termnal,hermetically sealed diacs

are designed specifically for triggering thyristors.

They demonstrate low break over current at break

over voltage as they withstand peak pulse current,

The breakover symmetry is within three volts(DB6).

These diacs are intended for use in thyrisitors

phase control,circuits for lamp dimming,universal

motor speed control,and heat control.

Parameters

See FIG.3

2.0

-40--- +125

C=22nf(NOTE 2)

See FIG.1

ELECTRICAL CHARACTERISTICS

Test Conditions

-40--- +125

LLDB3

LLDB4

See FIG.2

Max

Min

SILICON BIDIRECTIONAL DIAC

LLDB3 THRU LLDB4

DO-214AC/SMA

0.063 (1.60)

0.047 (1.20)

0.181(4.60)

0.154(3.90)

0.110(2.80)

0.100(2.50)

0.060(1.52)

0.030(0.76)

0.209(5.3)

0.189(4.8)

0.010(0.255)

0.006(0.145)

0.008(0.203)MAX.

0.096(2.45)

0.075(1.90)

Dimensions in inches and (millimeters)

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V2.22