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C4D20120D 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 C4D20120D
상세설명  Silicon Carbide Schottky Diode
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

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ISCD7072
eq C4D20120D
Silicon Carbide Schottky Diode
www.iscsemi.com
1
FEATURES
· 1.2kV Schottky Rectifier
· Zero Reverse Recovery Current
· High-Frequency Operation
APPLICATIONS
· Boost Diodes in PFC or DC/DC Stages
· AC/DC Converters
· Switch Mode Power Supply (SMPS)
· Free Wheeling Diodes in Inverters Stages
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitisve Peak Reverse Voltage
1200
V
IF
Continuous Forward Current
Tc=25℃
34×2
A
Tc=135℃
16.5×2
Tc=157℃
10×2
IFSM
Non-Repetitive Forward Surge
Current
Tc=25℃,tp=10ms,Half Sine Pulse
71
A
Tc=110℃,tp=10ms,Half Sine Pulse
59.5
IFRM
Repetitive Peak Forward Surge
Current
Tc=25℃,tp=10ms,Half Sine Pulse
47
A
Tc=110℃,tp=10ms,Half Sine Pulse
31.5
Ptot
Power Dissipation
Tc=25℃
176×2
W
Tc=110℃
76×2
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~135
℃


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