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LET8180 데이터시트(PDF) 1 Page - STMicroelectronics |
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LET8180 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() 1/4 TARGET DATA January, 28 2003 LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION DESCRIPTION The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 5 2 1. Drain 2. Drain 3. Source 4. Gate 5. Gate 4 M252 epoxy sealed ORDER CODE LET8180 BRANDING LET8180 ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V ID Drain Current 18 A PDISS Power Dissipation (@ Tc =+70 °C) 289 W Tj Max. Operating Junction Temperature 200 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.45 °C/W |
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