3/6

LIS2L02AQ

ELECTRICAL CHARACTERISTCS (Temperature range -40°C to +85°C)

1

FUNCTIONALITY

1.1 Sensing element

The THELMA process is utilized to create a surface micro-machined accelerometer. The technology allows to

carry out suspended silicon structures which are attached to the substrate in a few points called anchors and

free to move on a plane parallel to the substrate itself. To be compatible with the traditional packaging tech-

niques a cap is placed on top of the sensing element to avoid blocking the moving parts during the molding

phase.

The equivalent circuit for the sensing element is shown in the below figure; when a linear acceleration is applied,

the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This im-

balance is measured using charge integration in response to a voltage pulse applied to the sense capacitor.

The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the maximum

variation of the capacitive load is few tenth of pF.

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Supply voltage

3

5.25

V

Supply current

1.0

mA

Zero-g level

ratiometric to Vdd

V

Acceleration range

0V on FS pin

±1.8

±2.0

±2.2

g

±6.0

g

Sensitivity ratiometric to

Full-scale = 2g

V/g

Full-scale = 6g

V/g

Non Linearity

Best fit straight line

X, Y axis

Full-scale = 2g

±0.3

%

Sensing Element

Resonant Frequency

X, Y axis

4.0

KHz

Acceleration noise

density

Full-scale = 2g

50

µg/

Self test output voltage

Ratiometric to Vdd

@ 5V

100

mV

Self test input

Logic 0 level

0

0.8

V

Logic 1 level

2.8

V

Output impedance

100

k

Ω

Capacitive load drive

320

pF

Hz