STTH1512PI datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STTH1512

4/11

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =600V

T =125°C

Figure 5.

Reverse recovery time versus

dIF/dt (typical values)

Figure 6.

Reverse recovery charges versus

dIF/dt (typical values)

100

150

200

250

300

350

400

450

500

550

600

100

150

200

250

300

350

400

450

500

t (ns)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =600V

T =125°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

100

150

200

250

300

350

400

450

500

Q (µC)

I =2 x I

F(AV)

I =0.5 x I

F(AV)

I=I

F(AV)

V =600V

T =125°C

dI /dt(A/µs)

Figure 7.

Softness factor versus

dIF/dt (typical values)

Figure 8.

Relative variations of dynamic

parameters versus junction

temperature

0.5

1.0

1.5

2.0

2.5

3.0

100

150

200

250

300

350

400

450

500

S factor

2xI

T =125°C

F(AV)

≤

V =600V

dI /dt(A/µs)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

100

125

IRM

QRR

S factor

T (°C)

I=I

Reference: T =125°C

F(AV)

V =600V

trr

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