STPS10170C datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STPS10170C

4/10

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 8.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

Figure 9.

Forward voltage drop versus

forward current (per diode)

Figure 10.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, Cu = 35 µm - DPAK)

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, Cu = 35 µm - D2PAK)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

100

125

150

175

R(µA)

j=150°C

j=125°C

j=25°C

j=75°C

j=175°C

VR(V)

100

1000

100

1000

C(pF)

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

80.0

90.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

FM(A)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)

100

th( -a)(°C/W)

DPAK

SCU(cm²)

th(j-a)(°C/W)

D²PAK

SCU(cm²)

th(j-a)(°C/W)

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