STPS10170CB datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

STPS10170C

Characteristics

3/10

Figure 1.

Conduction losses versus average

forward current (per diode)

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

F(AV)(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

100

125

150

175

F(AV)(A)

th(j-a)=15°C/W

δ=tp/T

th(j-a)=Rth(j-c)

Tamb(°C)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance, junction to case versus

pulse duration

1.E-03

1.E-02

1.E-01

1.E+00

M(A)

C=50°C

C=75°C

C=125°C

δ =0.5

t(s)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

Single pulse

TO-220AB

DPAK

I²PAK

D²PAK

tp(s)

STPS10170CB 데이터시트(PDF) 3 Page - STMicroelectronics

STPS10170CB 데이터시트(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10

데이터시트 다운로드

링크 URL