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IS41C16100-50TL 데이터시트(PDF) 3 Page - Integrated Silicon Solution, Inc

부품명 IS41C16100-50TL
상세설명  1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
PDF  23 Pages
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제조업체  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS41C16100-50TL 데이터시트(HTML) 3 Page - Integrated Silicon Solution, Inc

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IS41C16100
IS41LV16100
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. L
12/22/05
ISSI®
TRUTH TABLE
Function
RAS
RAS
RAS
RAS
RAS
LCAS
LCAS
LCAS
LCAS
LCAS UCAS
UCAS
UCAS
UCAS
UCAS
WE
WE
WE
WE
WE
OE
OE
OE
OE
OE
Address tR/tC
I/O
Standby
H
H
H
X
X
X
High-Z
Read: Word
L
L
L
H
L
ROW/COL
DOUT
Read: Lower Byte
L
L
H
H
L
ROW/COL
Lower Byte, DOUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, DOUT
Write: Word (Early Write)
L
L
L
L
X
ROW/COL
DIN
Write: Lower Byte (Early Write)
L
L
H
L
X
ROW/COL
Lower Byte, DIN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, DIN
Read-Write(1,2)
LL
L
H
→LL→H
ROW/COL
DOUT, DIN
EDO Page-Mode Read(2)
1stCycle:
L
H
→LH→L
H
L
ROW/COL
DOUT
2ndCycle:
L
H
→LH→L
H
L
NA/COL
DOUT
AnyCycle:
L
L
→HL→H
H
L
NA/NA
DOUT
EDO Page-Mode Write(1)
1stCycle:
L
H
→LH→L
L
X
ROW/COL
DIN
2ndCycle:
L
H
→LH→L
L
X
NA/COL
DIN
EDO Page-Mode(1,2)
1stCycle:
L
H
→LH→LH→LL→H
ROW/COL
DOUT, DIN
Read-Write
2ndCycle:
L
H
→LH→LH→LL→H
NA/COL
DOUT, DIN
HiddenRefresh
Read(2)
L
→H→L
L
L
H
L
ROW/COL
DOUT
Write(1,3)
L
→H→L
L
L
L
X
ROW/COL
DOUT
RAS-OnlyRefresh
L
H
H
X
X
ROW/NA
High-Z
CBR Refresh(4)
H
→L
L
L
X
X
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS or UCAS active).
3. EARLY WRITE only.
4. At least one of the two
CAS signals must be active (LCAS or UCAS).



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