| 전자부품 데이터시트 검색엔진 |
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L5973AD 데이터시트(PDF) 12 Page - STMicroelectronics |
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L5973AD 데이터시트(HTML) 12 Page - STMicroelectronics |
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12 / 21 page ![]() Functional description L5973AD 12/21 Figure 7. Driving circuitry 4.7 Inhibit function The inhibit feature allows to put in stand-by mode the device. With INH pin higher than 2.2 V the device is disabled and the power consumption is reduced to less than 100 µA. With INH pin lower than 0.8 V, the device is enabled. If the INH pin is left floating, an internal pull up ensures that the voltage at the pin reaches the inhibit threshold and the device is disabled. The pin is also Vcc compatible. 4.8 Thermal shutdown The shutdown block generates a signal that turns off the power stage if the temperature of the chip goes higher than a fixed internal threshold (150 °C). The sensing element of the chip is very close to the PDMOS area, so ensuring an accurate and fast temperature detection. An hysteresis of approximately 20 °C avoids that the devices turns on and off continuously Vgsmax GATE STOP DRIVE DRAIN OFF ON PDMOS VOUT DRAIN VCC ILOAD C ESR D00IN1133 IOFF ION ON/OFF CONTROL CLAMP L |
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